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IRG4BC10SPBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRG4BC10SPBF
IR
International Rectifier IR
IRG4BC10SPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRG4BC10SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
3.7
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.64 — V/°C VGE = 0V, IC = 1.0mA
1.58 1.8
IC = 8.0A
VGE = 15V
2.05 —
V
IC = 14A
See Fig.2, 5
1.68 —
IC = 8.0A , TJ = 150°C
— 6.0
VCE = VGE, IC = 250µA
-9.5 — mV/°C VCE = VGE, IC = 250µA
5.5 — S VCE = 100V, IC = 8.0A
— 250 µA VGE = 0V, VCE = 600V
— 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
— 15 22
— 2.4 3.6
— 6.5 9.8
— 25 —
— 28 —
— 630 950
— 710 1100
— 0.14 —
— 2.58 —
— 2.72 4.3
— 24 —
— 31 —
— 810 —
— 1300 —
— 3.94 —
— 7.5 —
— 280 —
— 30 —
— 4.0 —
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 8.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
„ Pulse width 80µs; duty factor 0.1%.
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100,
(See fig. 13a)
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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