IRF7811WGPBF Ver la hoja de datos (PDF) - International Rectifier
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IRF7811WGPBF Datasheet PDF : 6 Pages
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PD- 96254
IRF7811WGPbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% Tested for Rg
• Lead-Free
• Halogen-Free
S
1
S
2
S
3
A
8
D
7
D
6
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
SO-8
G
4
5
D
Top View
DEVICE CHARACTERISTICS
The IRF7811WGPbF has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WGPbF offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical PCB
mount application.
RDS(on)
QG
Qsw
Qoss
IRF7811WGPbF
9.0mΩ
22nC
10.1nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
TA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
I
D
IDM
PD
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7811WPbF
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
07/10/09
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