IRF7452QPBF Ver la hoja de datos (PDF) - International Rectifier
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componentes Descripción
Lista de partido
IRF7452QPBF Datasheet PDF : 9 Pages
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END OF LIFE
IRF7452QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in SO-8
package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
VDSS
100V
HEXFET® Power MOSFET
RDS(on) max ID
0.060Ω
4.5A
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Base part number Orderable part number
Package
Type
Standard Pack
Form
Quantity
EOL
Notice
Replacement Part Number
IRF7452QPbF
IRF7452QTRPbF
IRF7452QPbF
SO-8
SO-8
Tape and Reel
Tube
4000
95
EOL 529 Please search the EOL part number on IR’s website for
EOL 529
guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
± 30
3.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Notes through are on page 8
www.irf.com
1
12/19/14
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