SMBT2907AE6327 Ver la hoja de datos (PDF) - Infineon Technologies

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SMBT2907AE6327

PNP Silicon Switching Transistor

Infineon Technologies 

PNP Silicon Switching Transistor

High DC current gain: 0.1mA to 500 mA

Low collector-emitter saturation voltage

Complementary type:

SMBT2222A/ MMBT2222A (NPN)

SMBT2907A/MMBT2907A

3

2

1 VPS05161

Type

Marking

SMBT2907A/MMBT2907A s2F

1=B

Pin Configuration

2=E

3=C

Package

SOT23

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

DC collector current

Total power dissipation, TS = 77 °C

Junction temperature

Storage temperature

VCEO

VCBO

VEBO

IC

Ptot

Tj

Tstg

Thermal Resistance

Junction - soldering point1)

RthJS

1For calculation of RthJA please refer to Application Note Thermal Resistance

Value

60

60

5

600

330

150

-65 ... 150

220

Unit

V

mA

mW

°C

K/W

1

Jun-12-2002

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