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MAX2203EWTT10

RMS Power Detector

Maxim Integrated 

RMS Power Detector

ABSOLUTE MAXIMUM RATINGS

VCC to GND ...........................................................-0.3V to +4.5V

ENA, OUT, FILT to GND ........................................-0.3V to +3.0V

RFIN Input Power ...........................................................+10dBm

Continuous Power Dissipation (TA = +70°C)

6-Bump WLP (derate 2.9mW/°C above +70°C)...........232mW

Junction-to-Ambient Thermal Resistance (θJA)

(Note 1) ......................................................................347°C/W

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +160°C

Junction Temperature .....................................................+150°C

Lead Temperature (soldering, 10s)..........Reflow Profile (Note 2)

Note 1: Package thermal resistances were obtained using the method described in JEDEC specifications. For detailed information

on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.

Note 2: Refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

CAUTION! ESD SENSITIVE DEVICE

DC ELECTRICAL CHARACTERISTICS

(VCC = 2.5V to 4.2V, TA = -40°C to +85°C, VENA = 2.7V, no RF signal applied. Typical values are at VCC = 2.8V, TA = +25°C, unless

otherwise noted.) (Note 3)

PARAMETER

SYMBOL

CONDITIONS

MIN TYP MAX UNITS

Supply Voltage

Supply Current

Shutdown Supply Current

ENA Logic-High Threshold

ENA Logic-Low Threshold

ENA Input Current

VCC

2.5

2.8

4.2

V

ICC

VCC = 2.8V, RF input = -24dBm to +3dBm

5

8

mA

VENA = 0V

0.5

10

µA

VIH

1.1

2.7

V

VIL

0

0.6

V

VENA = 1.1V

25

µA

AC ELECTRICAL CHARACTERISTICS

(VCC = 2.8V, TA = -40°C to +85°C, VENA = 2.7V, fRF = 800MHz to 2GHz, unless otherwise noted. Typical values are at TA = +25°C.)

(Note 3)

PARAMETER

RF Input Frequency

Maximum Output Voltage

Minimum Output Voltage

SYMBOL

CONDITIONS

RFIN at +3dBm

No RF input power

MIN

800

1.05

TYP

1.5

300

MAX

2000

1.75

400

UNITS

MHz

V

mV

Minimum Input Power Level

Log Slope

Log Conformance Error with

10dB Step

+1dB input power step results in at least

-24

25mV increase in VOUT (Note 4)

dBm

[(VOUT at +3dBm) - (VOUT at -24dBm)]/27

25

35

45 mV/dB

(Notes 4, 5)

-1.3

+1.3

dB

Power-Detector Accuracy Due to

Temperature

RF input at -4dBm to 0dBm, TA = -40°C to

+85°C, relative to +25°C

±0.4

dB

Note 3: Guaranteed by production test at TA = +85°C and 800MHz. Guaranteed by design and characterization at TA = -40°C and

TA = +25°C, and over frequency limits.

Note 4: Guaranteed by design and characterization.

Note 5: Input power -24dBm to +3dBm. Ideal straight line calibrated with input power -20dBm and 0dBm at TA = +25°C.

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