datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

ST110S Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
ST110S
IR
International Rectifier IR
ST110S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ST110S Series
Bulletin I25167 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
04
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
ST110S
08
12
16
800
1200
1600
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1700
IDRM/IRRM max.
@ TJ = TJ max
mA
20
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
ST110S
110
90
175
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
0.90
0.92
1.79
1.81
1.52
600
1000
Units Conditions
A 180° conduction, half sine wave
°C
A DC @ 85°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
ST110S
500
2.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20, tr 1µs
TJ = TJ max, anode voltage 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
2
www.irf.com

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]