VNS1NV04DPTR-E Ver la hoja de datos (PDF) - STMicroelectronics

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VNS1NV04DPTR-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VNS1NV04DP-E

2.2

Thermal data

Table 3.

Symbol

Thermal data

Parameter

Rthj-lead

Rthj-amb

Thermal resistance junction-lead (per channel)

Thermal resistance junction-ambient

Electrical specifications

Max. value

30

See Figure 31

Unit

°C/W

°C/W

2.3

Electrical characteristics

Table 4. Off(1)

Symbol

Parameter

Test conditions

VCLAMP

Drain-source clamp

voltage

VIN = 0 V; ID = 0.5 A

VCLTH

Drain-source clamp

threshold voltage

VIN = 0 V; ID = 2 mA

VINTH

Input threshold

voltage

VDS = VIN; ID = 1 mA

IISS

Supply current from

input pin

VDS = 0 V; VIN = 5 V

VINCL

Input-source clamp

voltage

IIN = 1 mA

IIN = -1 mA

Zero input voltage

IDSS

drain current

(VIN = 0V)

VDS = 13 V; VIN = 0 V; Tj = 25 °C

VDS = 25 V; VIN = 0 V

1. -40 °C < Tj < 150 °C, unless otherwise specified.

Min. Typ. Max. Unit

40 45 55

V

36

V

0.5

2.5 V

100 150 µA

6

6.8

8

V

-1.0

-0.3 V

30 µA

75 µA

Table 5. On(1)

Symbol

Parameter

Test conditions

RDS(on)

Static drain-source on VIN = 5 V; ID = 0.5 A; Tj = 25 °C

resistance

VIN = 5 V; ID = 0.5 A

1. -40 °C < Tj < 150 °C, unless otherwise specified.

Min. Typ. Max. Unit

250 m

500 m

Table 6. Dynamic(1)

Symbol

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDD = 13 V; ID = 0.5 A

COSS Output capacitance VDS = 13 V; f = 1 MHz; VIN = 0 V

1. Tj = 25 °C, unless otherwise specified.

Min.

Typ.

2

90

Max.

Unit

S

pF

Doc ID 17344 Rev 3

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