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VNS1NV04TR-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

2

Electrical specifications

VND1NV04 - VNN1NV04 - VNS1NV04

Figure 3. Current and voltage conventions

ID

VDS

DRAIN

IIN

RIN

INPUT

SOURCE

VIN

2.1

Absolute maximum ratings

The rating listed in Table 2: Absolute maximum ratings may cause permanent damage to

the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the operating sections of this specification is not implied.

Exposure to Absolute maximum rating conditions for extended periods may affect device

reliability.

Table 2. Absolute maximum ratings

Symbol

Parameter

VDSn Drain-source voltage (VINn=0 V)

VINn Input voltage

IINn Input current

RIN MINn Minimum input series impedance

IDn Drain current

IRn Reverse DC output current

VESD1 Electrostatic discharge (R=1.5 KΩ, C=100 pF)

Electrostatic discharge on output pins only

VESD2 (R=330 Ω, C=150 pF)

Ptot Total dissipation at Tc=25 °C

Tj Operating junction temperature

Tc Case operating temperature

Tstg Storage temperature

Value

SOT-223 SO-8 DPAK

Internally clamped

Internally clamped

+/-20

330

Internally limited

-3

4000

16500

7

8.3

35

Internally limited

Internally limited

-55 to 150

Unit

V

V

mA

Ω

A

A

V

V

W

°C

°C

°C

6/33

Doc ID 7381 Rev 4

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