STP80NF55L-08 Ver la hoja de datos (PDF) - STMicroelectronics

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STP80NF55L-08

MOSFET N-CH 55V 80A I2PAK

STMicroelectronics 

STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

0.5

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

55

Breakdown Voltage

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C

10

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

°C/W

°C/W

°C

Unit

V

µA

µA

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10 V, ID = 40 A

VGS = 5 V, ID = 40 A

Min.

1

Typ.

Max.

Unit

1.6

2.5

V

0.0065 0.008

Ω

0.008

0.01

Ω

DYNAMIC

Symbol

gfs

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS =15V , ID =40 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

150

4350

800

260

Max.

Unit

S

pF

pF

pF

2/9

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