BC817SU(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
BC817SU Datasheet PDF : 6 Pages
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NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BC817SU
4
5
3
6
2
1
Type
BC817SU
Marking
Pin Configuration
Package
B6s
1=E 2=C 3=C 4=C 5=C 6=B SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation-
TS ≤ 100°C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
45
50
5
500
1
100
200
1000
150
-65 ... 150
Value
≤ 50
Unit
V
mA
A
mA
mW
°C
Unit
K/W
1
2008-10-20
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