IRF9610STRRPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRF9610STRRPBF Datasheet PDF : 10 Pages
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www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
7
RDS(on) measured with current pulse of
6
2.0 µs duration. Initial TJ = 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
5
VGS = - 10 V
4
3
VGS = - 20 V
2
1
0
0
91081_12
-1 -2 -3 -4 -5 -6 -7
ID, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
91081_13
TC, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
20
15
10
5
0
0 20 40 60 80 100 120 140
91081_14
TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary tp to obtain
required IL
VGS = - 10 V tp
D.U.T.
VDS
VDD
-
+
EC
IL
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
Fig. 15 - Clamped Inductive Test Circuit
VDD
IL
tp
VDS
EC
Fig. 16 - Clamped Inductive Waveforms
S12-1558-Rev. D, 02-Jul-12
5
Document Number: 91081
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