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IKP20N60T
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP20N60T

IKW20N60T

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :

- Frequency Converters

- Uninterrupted Power Supply

• TrenchStop® and Fieldstop technology for 600 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

• Positive temperature coefficient in VCE(sat)

PG-TO-220-3-1

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel EmCon HE diode

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-247-3

Type

VCE

IC VCE(sat),Tj=25°C

Tj,max

Marking

IKP20N60T 600V 20A

1.5V

175°C

K20T60

IKW20N60T 600V 20A

1.5V

175°C

K20T60

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)

Diode forward current, limited by Tjmax TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj

Tstg

-

Package

PG-TO-220-3-1

PG-TO-247-3

Value

600

40

20

60

60

40

20

60

±20

5

166

-40...+175

-55...+175

260

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Unit

V

A

V

µs

W

°C

Power Semiconductors

1

Rev. 2.5 Sep. 08

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