IRG4PSH71KD Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRG4PSH71KD

UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)

International Rectifier 

IRG4PSH71KD

10000

8000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

6000

Cies

4000

2000

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCC = 400V

I C = 42A

15

10

5

0

0

100

200

300

400

500

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

15

VCC = 800V

VGE = 15V

14

TJ

IC

= 25 °C

= 42A

13

12

11

10

9

0

10

20

30

40

50

RG , Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

(Ω)

100 RG = 5.0Ω

VGE = 15V

VCC = 800V

10

IC = 84 A

IC = 42 A

IC = 21 A

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

Share Link: