G4PC40W Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

G4PC40W

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC40W

50

3.0

VGE = 15V

80 us PULSE WIDTH

40

IC = 40 A

2.5

30

IC = 20 A

2.0

20

IC = 10 A

1.5

10

0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

1

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001

PDM

t1

SINGLE PULSE

(THERMAL RESPONSE)

t2

Notes:

1. Duty factor D = t1 / t2

2. Peak TJ = PDM x Z thJC + TC

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

www.irf.com

Share Link: