IRG4PH50S Ver la hoja de datos (PDF) - International Rectifier
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IRG4PH50S Datasheet PDF : 8 Pages
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IRG4PH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.22 —
— 1.47 1.7
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0 A
VGE = 0V, IC = 2.0 mA
IC = 33A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance U
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
— 1.75 —
V
IC = 57A
See Fig.2, 5
— 1.55 —
IC = 33A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
27 40 — S VCE = 100V, IC = 33A
— — 250 µ A VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 167 251
IC = 33A
— 25 38 nC VCC = 400V
See Fig. 8
— 55 83
— 32 —
VGE = 15V
— 29 — ns TJ = 25°C
— 845 1268
IC = 33A, VCC = 960V
— 425 638
VGE = 15V, RG = 5.0Ω
— 1.80 —
Energy losses include "tail"
— 19.6 — mJ See Fig. 9, 10, 14
— 21.4 44
— 32 —
— 30 —
— 1170 —
— 1000 —
TJ = 150°C,
ns IC = 33A, VCC = 960V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
— 37 — mJ See Fig. 10,11,14
— 13 — nH Measured 5mm from package
— 3600 —
— 160 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 30 —
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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