IRG4PH50S-E Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRG4PH50S-E Datasheet PDF : 8 Pages
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7000
6000
Cies
5000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
4000
C oes
3000
2000 C res
1000
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PH50S
20 VCC = 400V
I C = 33A
15
10
5
0
0
25 50 75 100 125 150 175
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
25.0 VCC = 960V
VGE = 15V
TJ = 25 °C
IC = 33A
24.0
23.0
22.0
1000 RG = 15O5ΩhΩm
VGE = 15V
VCC = 960V
100
10
IC = 66A
IC = 33A
IC = 16.5A
21.0
0
10
20
30
40
50
RRGG, G, aGteatReeRsiesstaisntcaen(ceΩ()Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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