IRG4PH30K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — —
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.19 —
— 3.10 4.2
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 2.0mA
IC = 10A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance U
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
— 3.90 —
V
IC = 20A
See Fig.2, 5
— 3.01 —
IC = 10A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
4.3 6.5 — S VCE = 100 V, IC = 10A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ.
53
9.0
21
28
23
200
110
0.64
0.92
1.56
—
27
26
310
330
3.18
13
800
60
14
Max.
80
14
32
—
—
300
170
—
—
2.4
—
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
Conditions
IC = 10A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC =10A, VCC = 960V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
See Fig. 9,10,14
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23Ω
TJ = 150°C,
IC = 10A, VCC = 960V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =23Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
2
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