IRG4PH20K Ver la hoja de datos (PDF) - International Rectifier

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IRG4PH20K

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PH20K

16

12

Square wave:

8

60% of rated

voltage

For both:

Duty cycle: 50%

TJ = 125˚ C

Tsink = 90˚ C

Gate drive as specified

Power Dissipation = 15W

Triangular wave:

Clamp voltage:

80% of rated

4

0

0.1

Ideal diodes

1

10

f, Frequency (kHz)

)

100

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

10

TJ = 150 °C

1

TJ = 25 °C

0.1

1

VGE = 15V

20µs PULSE WIDTH

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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10

TJ = 150 °C

TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

1

6

8

10

12

14

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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