G30H603 Ver la hoja de datos (PDF) - Infineon Technologies

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G30H603

600V high speed switching series third generation

Infineon Technologies 

IGP30N60H3

Highspeedswitchingseriesthirdgeneration

5

Eoff

Eon

Ets

4

3

2

1

3.0

Eoff

Eon

Ets

2.5

2.0

1.5

1.0

0.5

0

5 10 15 20 25 30 35 40 45 50 55 60

IC,COLLECTORCURRENT[A]

Figure 13. Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

rG=10,5Ω,testcircuitinFig.E)

0.0

3

8

13

18

23

28

33

rG,GATERESISTOR[Ω]

Figure 14. Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,

IC=30A,testcircuitinFig.E)

2.00

Eoff

Eon

1.75

Ets

1.50

2.00

Eoff

Eon

1.75

Ets

1.50

1.25

1.25

1.00

1.00

0.75

0.75

0.50

0.50

0.25

0.25

0.00

25

50

75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

0.00

200

250

300

350

400

450

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,VCE=400V,VGE=15/0V,IC=30A,

rG=10,5Ω,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,Tj=175°C,VGE=15/0V,IC=30A,

rG=10,5Ω,testcircuitinFig.E)

9

Rev.2.2,2014-03-11

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