IRG4BC30US Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC30US

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4BC30U-S

2000

V GE = 0V,

f = 1MHz

C ies = C ge + C gc , Cce SH OR TE D

C res = C gc

1600

C oes = C ce + C gc

C ie s

1200

800

C oes

400

C res

0

A

1

10

100

VCE, Collector-to-Em itter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 400V

IC = 12A

16

12

8

4

0

A

0

10

20

30

40

50

Qg , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

0.5

VCC = 480V

VGE = 15V

T J = 25°C

IC = 12A

0.4

0.3

10

RG = 23 Ω

V GE = 15V

V CC = 480V

1

IC = 24A

I C = 12A

I C = 6.0A

0.2

0

A

10

20

30

40

50

60

R G , Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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0.1

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Ju n ctio n Te m pe ra tu re (°C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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