IRG4BC30WS Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC30WS

Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A

International Rectifier 

IRG4BC30W-S

5.0

4.0

3.0

Square wave:

60% of rated

voltage

2.0

For both:

Duty cycle: 50%

TJ = 125°C

T sink= 90°C

Gate drive as specified

Power Dissipation = 1.75W

Triangular wave:

Clamp voltage:

80% of rated

1.0

Ideal diodes

0.0

0.1

A

1

10

100

1000

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

100

TJ = 150 °C

10

TJ = 25 °C

VGE = 15V

20µs PULSE WIDTH

1

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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100

TJ = 150 °C

10

TJ = 25 °C

1

0.1

5.0

VCC = 50V

5µs PULSE WIDTH

6.0

7.0

8.0

9.0 10.0 11.0

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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