IRG4BC20W Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC20W

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

1000

800

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

600

 Cies

400

200

0

1

C oes

C res

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4BC20W

 20

VCC = 400V

I C = 6.5A

16

12

8

4

0

0

5

10

15

20

25

30

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 0.15 VCC = 480V

VGE = 15V

TJ = 25 °C

IC = 6.5A

0.14

0.13

 10 RG = O50hΩm

VGE = 15V

VCC = 480V

1

0.1

 IC = 13 A

 IC = 6.5 A

 IC =3.25 A

0.12

0

10

20

30

40

50

RG , Gate Resistance (OΩhm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.01

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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