NGTB25N120FLWG Ver la hoja de datos (PDF) - ON Semiconductor
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NGTB25N120FLWG Datasheet PDF : 10 Pages
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NGTB25N120FLWG
TYPICAL CHARACTERISTICS
16
2.5
VCE = 600 V
VGE = 15 V
VCE = 600 V
2 IC = 25 A
12
Rg = 10 W
Eon
1.5
Eoff
8
1
4
0.5
0
0
50 100 150 200 250 300 350
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Energy Loss vs. Temperature
1000
100
td(on)
tf
td(off)
tr
10 VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
1000
100
tf
td(off)
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
1
8 12 16 20 24 28 32 36 40 44 48 52
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. IC
4
VCE = 600 V
3.5 VGE = 15 V
3
TJ = 150°C
Rg = 10 W
2.5
2
1.5 Eon
1
Eoff
0.5
0
8 12 16 20 24 28 32 36 40 44 48 52
IC, COLLECTOR CURRENT (A)
Figure 10. Energy Loss vs. IC
5.0
4.5
VCE = 600 V
VGE = 15 V
4.0 IC = 25 A
3.5 TJ = 150°C
Eon
3.0
2.5
Eoff
2.0
1.5
1.0
0.5
0
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
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5
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