IGW25N120H3 Ver la hoja de datos (PDF) - Infineon Technologies
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IGW25N120H3 Datasheet PDF : 16 Pages
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IGW25N120H3
High speed switching series third generation
12
EÓËË
EÓÒ
EÚÙ
10
8
6
4
2
0
5
15
25
35
45
I†, COLLECTOR CURRENT [A]
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, R•=23Â, test circuit in Fig. E)
EÓËË
EÓÒ
4
EÚÙ
7
EÓËË
EÓÒ
EÚÙ
6
5
4
3
2
1
0
5
15
25
35
45
55
65
R•, GATE RESISTOR [Â]
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load, TÎ=175°C, V†Š=600V,
V•Š=15/0V, I†=25A, test circuit in Fig. E)
6
EÓËË
EÓÒ
EÚÙ
5
3
4
3
2
2
1
1
0
0
25 50 75 100 125 150 175
TÎ, JUNCTION TEMPERATURE [°C]
Figure 15. Typical switching energy losses as a
function of junction temperature
(ind load, V†Š=600V, V•Š=15/0V, I†=25A,
R•=23Â, test circuit in Fig. E)
0
400
500
600
700
800
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load, TÎ=175°C, V•Š=15/0V, I†=25A,
R•=23Â, test circuit in Fig. E)
10
Rev. 1.1, 2011-01-25
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