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G4PC50W

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC50W

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)CES

V(BR)CES

∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

IGES

Parameter

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage T

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance U

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min.

600

18

—

—

—

—

3.0

—

27

—

—

—

—

Typ. Max. Units

Conditions

— — V VGE = 0V, IC = 250µA

— — V VGE = 0V, IC = 1.0A

0.41 — V/°C VGE = 0V, IC = 5.0mA

1.93 2.3

IC = 27A

VGE = 15V

2.25 —

V

IC = 55A

See Fig.2, 5

1.71 —

IC = 27A , TJ = 150°C

— 6.0

VCE = VGE, IC = 250µA

-11 — mV/°C VCE = VGE, IC = 1.0mA

41 — S VCE = 100 V, IC = 27A

— 250 µA VGE = 0V, VCE = 600V

— 2.0

VGE = 0V, VCE = 10V, TJ = 25°C

— 5000

VGE = 0V, VCE = 600V, TJ = 150°C

— ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ. Max.

180 270

24 36

63 95

46 —

33 —

120 180

57 86

0.08 —

0.32 —

0.40 0.5

31 —

43 —

210 —

62 —

1.14 —

13 —

3700 —

260 —

68 —

Units

nC

ns

mJ

ns

mJ

nH

pF

Conditions

IC = 27A

VCC = 400V

See Fig.8

VGE = 15V

TJ = 25°C

IC = 27A, VCC = 480V

VGE = 15V, RG = 5.0Ω

Energy losses include "tail"

See Fig. 9, 10, 14

TJ = 150°C,

IC = 27A, VCC = 480V

VGE = 15V, RG = 5.0Ω

Energy losses include "tail"

See Fig. 10,11, 14

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

2

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