IRG4PC50W Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC50W

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

8000

6000

4000

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

 Cies

2000

C oes

C res

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4PC50W

 20

VCC = 400V

I C = 27A

16

12

8

4

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 3.0 VCC = 480V

VGE = 15V

TJ = 25 °C

IC = 27A

2.0

1.0

 10 RG = O5.h0mΩ

VGE = 15V

VCC = 480V

1

 IC = 54A

 IC = 27A

 IC = 13.5A

0.0

0

10

20

30

40

50

RGRG, ,GGaateteRReessiistanccee ((OΩh)m)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (° C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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