IRG4PC30W Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC30W

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC30W

25

V GE = 15V

20

15

10

5

0

A

25

50

75

100

125

150

TC , C ase Tem perature (°C )

Fig. 4 - Maximum Collector Current vs. Case

Temperature

3.0

VGE = 15V

80 us PULSE WIDTH

2.5

2.0

IC = 24 A

IC = 12 A

IC = 6 A

1.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

10

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

0.01

0.00001

PDM

t1

SINGLE PULSE

(THERMAL RESPONSE)

t2

Notes:

1. Duty factor D = t1 / t2

2. Peak TJ = PDM x Z thJC + TC

0.0001

0.001

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

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