G4PC40UD Ver la hoja de datos (PDF) - International Rectifier

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G4PC40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PC40UD

4000

V GE = 0V,

f = 1MHz

C ies = C ge + C gc , Cce S HO RTED

C res = C gc

C oes = C ce + C gc

3000

C ie s

2000

C oes

1000

Cres

0

A

1

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 400V

IC = 20A

16

12

8

4

0

A

0

20

40

60

80

100

120

Qg , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1.8

VCC = 480V

VGE = 15V

TC = 25°C

IC = 20A

1.6

1.4

1.2

1.0

0

10

20

A

30

40

50

60

R G, Gate Resistance ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

10

RG = 10Ω

VGE = 15V

VCC = 480V

1

I C = 40A

I C = 20A

IC = 10A

0.1

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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