A1266 Ver la hoja de datos (PDF) - Unspecified

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A1266

PNP Epitaxial Silicon Transistor

Unspecified 

A1266

PNP Epitaxial Silicon Transistor

Features

TO-92

Collector-Emitter Voltage: VCEO=-50V

Collector Dissipation: PC(max)=625mW

Absolute Maximum Ratings (TA=25oC)

Characteristic

Symbol Rating Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

-50

V

-50

V

-5

V

-150

mA

625

mW

150

oC

-55~+150 oC

1. Emitter 2. Collector 3. Base

Electrical Characteristics (TA=25oC)

Characteristic

Symbol

Test Conditions

Min

Max

Unit

Collector-Base Breakdown Voltage

BVCBO IC= -100µA, IE=0

-50

V

Collector-Emitter Breakdown Voltage

BVCEO IC= -0.1mA, IB=0

-50

V

Emitter-Base Breakdown Voltage

BVEBO IE= -100µA, IC=0

-5

V

Collector Cut-off Current

ICBO VCB= -50V, IE=0

-0.1

µA

Emitter Cut-off Current

IEBO VEB= -5V, IC=0

-0.1

µA

DC Current Gain

hFE1 VCE= -6V, IC= -2mA

70

400

hFE2 VCE= -6V, IC= -150mA

25

Collector-Emitter Saturation Voltage

VCE(sat) IC= -100mA, IB= -10mA

-0.3

V

Base-Emitter Saturation Voltage

VBE(sat) IC= -100mA, IB= -10mA

-0.1

V

Transition Frequency

fT

VCE= -10V, IC= -1mA

f=30MHz

80

MHz

hFE(1) CLASSIFICATION

Classification

hFE(1)

O

70 – 140

Y

120 – 300

GR

300 – 400

Elite Enterprises (H.K.) Co., Ltd.

Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.

Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk

Part No.: A1266

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