2SA1768S-AN Ver la hoja de datos (PDF) - ON Semiconductor

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2SA1768S-AN

Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP

ON Semiconductor 

2SA1768

Electrical Characteristics at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

Conditions

ICBO

IEBO

hFE1

hFE2

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

tf

VCB=--120V, IE=0A

VEB=--4V, IC=0A

VCE=--5V, IC=--100mA

VCE=--5V, IC=--10mA

VCE=--10V, IC=--50mA

VCB=--10V, f=1MHz

IC=--250mA, IB=--25mA

IC=--10μA, IE=0A

IC=--1mA, RBE=∞

IE=--10μA, IC=0A

See specified Test Circuit.

* : The 2SA1768 is classified by 100mA hFE as follows :

Rank

S

T

hFE

140 to 280

200 to 400

Switching Time Test Circuit

2SA1768

INPUT

PW=20μs

D.C.≤1%

VR

50Ω

IB1

IB2

RB

+

100μF

OUTPUT

RL

+

470μF

VBE=5V

VCC= --100V

IC=20IB1= --20IB2= --300mA

Ordering Information

Device

2SA1768S-AN

2SA1768T-AN

Package

NMP(Taping)

NMP(Taping)

Shipping

2,500pcs./box

2,500pcs./box

Ratings

min

typ

140*

90

--180

--160

--6

120

11

--0.2

--0.85

60

900

60

max

--0.1

--0.1

400*

--0.5

--1.2

Unit

μA

μA

MHz

pF

V

V

V

V

V

ns

ns

ns

memo

Pb Free

No.3582-2/7

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