P20N60(2009) Ver la hoja de datos (PDF) - Infineon Technologies

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P20N60
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

SGP20N60

SGW20N60

Fast IGBT in NPT-technology

• 75% lower Eoff compared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-220-3-1

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-247-3

Type

SGP20N60

SGW20N60

VCE

600V

600V

IC

VCE(sat)

Tj Marking Package

20A 2.4V 150°C G20N60 PG-TO-220-3-1

20A 2.4V 150°C G20N60 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 20 A, VCC = 50 V, RGE = 25 Ω ,

start at Tj = 25°C

Short circuit withstand time2

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature,

wavesoldering, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

Ts

Value

Unit

600

V

A

40

20

80

80

±20

V

115

mJ

10

µs

179

W

-55...+150

°C

260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.4 Nov 09

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