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G20N60

Fast S-IGBT in NPT-technology

Infineon Technologies 

SGP20N60

SGB20N60, SGW20N60

Fast S-IGBT in NPT-technology

• 75% lower Eoff compared to previous generation combined with

low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

C

G

E

Type

SGP20N60

SGB20N60

SGW20N60

VCE

IC

VCE(sat)

Tj

Package

600V 20A

2.4V

150°C TO-220AB

TO-263AB

TO-247AC

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 600V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 20 A, VCC = 50 V, RGE = 25 Ω ,

start at Tj = 25°C

Short circuit withstand time1)

VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

Ordering Code

Q67041-A4712-A2

Q67041-A4712-A4

Q67040-S4236

Value

Unit

600

V

A

40

20

80

80

±20

V

115

mJ

10

µs

179

W

-55...+150

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Mar-00

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