FDA18N50 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
FDA18N50 Datasheet PDF : 8 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
10-1
10-1
* Notes :
1. 250µs Pulse Test
2. T = 25oC
C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
VGS = 10V
0.4
0.3
VGS = 20V
0.2
* Note : TJ = 25oC
0.1
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000
Coss
3000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
2000
1000
Crss
* Note :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
150oC
100
2
25oC
-55oC
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
* Note : ID = 18A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
FDA18N50 Rev. A
3
www.fairchildsemi.com
Share Link: 