FDP20N50F Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDP20N50F Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
80 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
Figure 2. Transfer Characteristics
100
150oC
25oC
10
1
0.3
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.5
0.4
0.3
VGS = 10V
VGS = 20V
0.2
0.1
0
*Note: TJ = 25oC
25
50
75
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
4500
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
1500
Crss
0
0.1
1
10
50
VDS, Drain-Source Voltage [V]
*Notes:
1. VDS = 20V
2. 250s Pulse Test
1
4
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1
2. 250s Pulse Test
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
0
*Note: ID = 20A
0
10
20
30
40
50
60
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
3
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com
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