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FDA20N50F Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Lista de partido
FDA20N50F
Fairchild
Fairchild Semiconductor Fairchild
FDA20N50F Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Package Marking and Ordering Information
Device Marking
FDA20N50F
Device
FDA20N50F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
500
ID = 250μA, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 11A
VDS = 40V, ID = 11A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 20A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25Ω
-
-
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 22A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/μs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD 22A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300μs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ.
-
0.6
-
-
-
-
0.22
24
2550
350
27
50
14
20
45
120
100
60
-
-
-
154
0.5
Max. Units
-
-
10
100
±100
V
V/oC
μA
nA
5.0
V
0.26
Ω
-
S
3390 pF
465 pF
40
pF
65
nC
-
nC
-
nC
100
ns
250
ns
210
ns
130
ns
22
A
88
A
1.5
V
-
ns
-
μC
FDA20N50F Rev.C0
2
www.fairchildsemi.com

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