2N5114 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
2N5114 Datasheet PDF : 5 Pages
| |||
2N5114/5115/5116
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typa
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currentc
Drain Cutoff Current
Drain-Source On-Voltage
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VDS(on)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –1 nA
VGS = 0 V
VDS = –18 V
VDS = –15 V
VGS = 20 V, VDS = 0 V
TA = 150_C
VDG = –15 V, ID = –1 mA
VGS = 12 V
VDS = –15 V
VGS = 7 V
VGS = 5 V
VDS = –15 V
TA = 150_C
VGS = 12 V
VGS = 7 V
VGS = 5 V
ID = –15 mA
VGS = 0 V
ID = –7 mA
ID = –3 mA
VGS = 0 V, ID = –1 mA
IG = –1 mA , VDS = 0 V
45
5
0.01
–5
–10
–10
–10
–0.02
–0.02
–0.02
–1.0
–0.7
–0.5
–0.7
Dynamic
Common-Source
Forward Transconductancec
gfs
Common-Source
Output Conductancec
gos
4.5
VDS = –15 V, ID = –1 mA
f = 1 kHz
20
Drain-Source
On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
Common-Source
Input Capacitance
Ciss
VDS = –15 V, VGS = 0 V
f = 1 MHz
20
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltagec
VGS = 12 V
5
Crss
VDS = 0 V
f = 1 MHz
VGS = 7 V
6
VGS = 5 V
6
en
VDS = 10 V, ID = 10 mA
f = 1 kHz
20
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
See Switching Circuit
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
2N5114
Min Max
30
5
10
–30 –90
500
1
–500
–1
–1.3
75
–1
75
25
7
6
10
6
15
Limits
2N5115
Min Max
30
3
6
–15 –60
500
1
–500
–1
–0.8
100
–1
100
25
7
10
20
8
30
2N5116
Min Max
30
1
4
–5 –25
500
1
–500
–1
–0.6
150
–1
150
25
7
12
30
10
50
Unit
V
mA
pA
mA
pA
mA
V
W
V
mS
mS
W
pF
nV⁄
√Hz
ns
PSCIA
www.vishay.com
9-2
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
Share Link: 