2N5114 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
2N5114 Datasheet PDF : 5 Pages
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2N5114/5115/5116
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
–2
–1.6
VGS = 0 V
0.5 V
1.5 V
1.0 V
Output Characteristics
–2
VGS = 0 V
0.2 V
0.4 V
–1.6
0.6 V
–1.2
–1.2
2.0 V
–0.8
–0.8
0.8 V
–0.4
0
0
–25
–20
VGS(off) = 3 V
–0.1
–0.2
–0.3
–0.4
–0.5
VDS – Drain-Source Voltage (V)
Output Characteristics
VGS(off) = 3 V
VGS = 0 V
–0.4
0
0
VGS(off) = 1.5 V
–0.2
–0.4
–0.6
–0.8
–1.0
VDS – Drain-Source Voltage (V)
–2
VGS = 0 V
Output Characteristics
–1.6
3V
0.5 V
–15
1.0 V
–10
1.5 V
–5
2.0 V
0
0
–4
–8
–12
–16
–20
VDS – Drain-Source Voltage (V)
Capacitance vs. Gate-Source Voltage
30
VDS = 0 V
f = 1 MHz
24
18
Ciss
12
Crss
6
0
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
–1.2
2V
1V
4V
–0.8
–0.4
0
0
100 nA
VGS(off) = 5 V
–0.1
–0.2
–0.3
–0.4
–0.5
VDS – Drain-Source Voltage (V)
Gate Leakage Current
10 nA
1 nA
TA = 125_C
–1 mA
ID= –10 mA
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
–10 mA
–1 mA
IGSS @ 25_C
0.1 pA
0
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
www.vishay.com
9-4
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
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