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TGA4513

27 - 31 GHz 2W Balanced Power Amplifier

TriQuint Semiconductor 

Advance Product Information

February 14, 2008

TABLE II

DC PROBE TESTS

(TA = 25 °C Nominal)

TGA4513

SYMBOL

PARAMETER

IDSS1

Saturated Drain Current

GM1

Transconductance

VBVGS1

Breakdown Voltage gate-source

VBVGD1

Breakdown Voltage gate-drain

VP1,8

Pinch-off Voltage

MINIMUM MAXIMUM VALUE

60

282

V

132

318

mS

-30

-8

V

-30

-11

V

-1.5

-0.5

V

TABLE III

ELECTRICAL CHARACTERISTICS

(Ta = 25 0C, Nominal)

PARAMETER

Drain Operating

Quiescent Current

Small Signal Gain, S21

Input Return Loss, S11

Output Return Loss, S22

Reverse Isolation, S12

Output Power @ 1 dB Compression Gain, P1dB

Power @ saturated, Psat

IMR3 @ 18 dBm SCL

TYPICAL

6

840

20

14

14

-40

> 32

33

37

UNITS

V

mA

dB

dB

dB

dB

dBm

dBm

dBc

TABLE IV

THERMAL INFORMATION

Parameter

θJC Thermal Resistance

(Channel Case)

Test Conditions

VD = 6 V

ID = 0.84 A (Quiescent)

PDISS = 5.04 W

Tbase = 70 °C

TCH

(°C)

130.1

θJC

(°C/W)

TM

(hrs)

11.92

5.9 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at

70oC baseplate temperature. Worst case condition with no RF applied, 100% of DC power is

dissipated.

3

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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