TC74LCX125F(2012) Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Lista de partido

TC74LCX125F
(Rev.:2012)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

Electrical Characteristics

DC Characteristics (Ta = −40 to 85°C)

TC74LCX125F/FT/FK

Characteristics

Symbol

Test Condition

Min

VCC (V)

Max

Unit

H-level

VIH

1.65 to 2.3 VCC×0.9

⎯

⎯

2.3 to 2.7

1.7

⎯

Input voltage

L-level

VIL

2.7 to 3.6

2.0

⎯

V

1.65 to 2.3

⎯

VCC×0.1

⎯

2.3 to 2.7

⎯

0.7

2.7 to 3.6

⎯

0.8

IOH = −100 μA 1.65 to 3.6 VCC−0.2

⎯

IOH = −4 mA

1.65

1.05

⎯

H-level

VOH VIN = VIH or VIL

IOH = −8 mA

2.3

1.7

⎯

IOH = −12 mA

2.7

2.2

⎯

Output voltage

IOH = −18 mA

3.0

2.4

IOH = −24 mA

3.0

2.2

IOL = 100 μA 1.65 to 3.6

⎯

⎯

⎯

V

0.2

IOL = 4 mA

1.65

⎯

0.45

L-level

VOL VIN = VIH or VIL

IOL = 8 mA

2.3

IOL = 12 mA

2.7

⎯

0.7

⎯

0.4

IOL = 16 mA

3.0

⎯

0.4

IOL = 24 mA

3.0

⎯

0.55

Input leakage current

3-state output OFF state current

IIN VIN = 0 to 5.5 V

VIN = VIH or VIL

IOZ

VOUT = 0 to 5.5 V

1.65 to 3.6 ⎯

1.65 to 3.6 ⎯

±5.0

μA

±5.0

μA

Power-off leakage current

IOFF VIN/VOUT = 5.5 V

0

⎯

10.0

μA

Quiescent supply current

VIN = VCC or GND

ICC

VIN/VOUT = 3.6 to 5.5 V

1.65 to 3.6 ⎯

1.65 to 3.6 ⎯

10.0

±10.0

μA

Increase in Icc per input

ΔICC VIH = VCC − 0.6 V

2.7 to 3.6

⎯

500

4

2012-02-29

Share Link: