BCR10UM Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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BCR10UM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
VFGT !
VRGT !
Gate trigger voltage V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
VRGT #
#
IFGT !
IRGT !
Gate trigger current V2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
IRGT #
#
VGD
Rth (j-c)
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case V3 V4
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Limits
Min. Typ. Max.
—
—
2.0
—
—
1.5
—
—
1.5
—
—
1.5
—
—
1.5
—
—
15
—
—
15
—
—
15
0.2
—
—
—
—
2.7
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7
5
3
2
Tj = 125°C
101
7
5
3
Tj = 25°C
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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