BAS116E6327XT Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

BAS116E6327XT

Silicon Low Leakage Diode

Infineon Technologies 

Silicon Low Leakage Diode

• Low-leakage applications

• Medium speed switching times

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BAS116...

BAS116

!



Type

BAS116

Package

SOT23

Configuration

single

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

Peak reverse voltage

Forward current

Non-repetitive peak surge forward current

t = 1 µs

VR

VRM

IF

IFSM

t=1s

Total power dissipation

Ptot

TS ≤ 54°C

Junction temperature

Tj

Storage temperature

Tstg

Thermal Resistance

Parameter

Junction - soldering point2)

BAS116

Symbol

RthJS

1Pb-containing package may be available upon special request

2For calculation of RthJA please refer to Application Note Thermal Resistance

Marking

JVs

Value

80

85

250

4.5

0.5

370

Unit

V

mA

A

mW

150

°C

-65 ... 150

Value

≤ 260

Unit

K/W

1

2007-04-19

Share Link: