ITF86172SK8T Ver la hoja de datos (PDF) - Intersil

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ITF86172SK8T

10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET

Intersil 

ITF86172SK8T

Typical Performance Curves (Continued)

-500

-100

RθJA = 50oC/W

SINGLE PULSE

TJ

TA

=

=

MAX RATED

25oC

100µs

-10 OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

1ms

-1

-1

10ms

-10

-60

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-40

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

-30

-20

TJ = 150oC

-10

TJ = 25oC

0

TJ = -55oC

-1.5

-2.0

-2.5

-3.0

-3.5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

-40

VGS = -10V

VGS = -5V

-30

VGS = -4.5V

VGS = -4V

-20

VGS = -3.5V

VGS = -3V

-10

0

0

TA = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-0.5

-1.0

-1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

30

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID = -10A

25

20

ID = -2A

15

10

-2

-3 -4

-5 -6

-7 -8

-9 -10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.4

VGS = -10V, ID = -10A

1.2

1.0

0.8

0.56

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = -250µA

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4

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