PS30120(2011) Ver la hoja de datos (PDF) - STMicroelectronics

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PS30120
(Rev.:2011)

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS30120DJF

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values)

IR(mA)

1.E+02

1.E+01

Tj=150°C

1.E+00

1.E-01

1.E-02

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

1.E-03

1.E-04

0

Tj=25°C

VR(V)

10 20 30 40 50 60 70 80 90 100 110 120

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values)

C(pF)

10000

F=1MHz

Vosc=30mVRMS

Tj=25°C

1000

100

1

VR(V)

10

100

1000

Figure 9. Forward voltage drop versus

forward current

IFM(A)

60

55

50

45

40

35

Tj=125°C

(Maximum values)

30

25

Tj=125°C

20

(Typical values)

15

Tj=25°C

(Maximum values)

10

5

VFM(V)

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Figure 10. Thermal resistance junction to

ambient versus copper surface

under tab

Rth(j-a)(°C/W)

250

200

Epoxy printed circuit board FR4,

copper thickness = 35 µm

150

100

50

SCu(cm²)

0

0

1

2

3

4

5

6

7

8

9

10

4/7

Doc ID 15671 Rev 5

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