Table 14
13 Avalanche characteristics
OptiMOS™ Power-MOSFET
BSB013NE2LXI
Electrical characteristics diagrams
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
Table 15
15 Typ drain-source leakage current
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
16 Gate charge waveforms
IDSS=f(VDS); VGS=0 V
Final Data Sheet
8
2.0, 2011-03-18