A1806J Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza

componentes Descripción

Lista de partido

A1806J

Silicon PNP epitaxial planar type

Panasonic Corporation 

Transistors

2SA1806J

Silicon PNP epitaxial planar type

For high speed switching

1.60+–00..0035

1.00±0.05

Unit: mm

0.12+–00..0013

■ Features

3

• High speed switching

• Low collector-emitter saturation voltage VCE(sat)

12

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

0.27±0.02

(0.50)(0.50)

■ Absolute Maximum Ratings Ta = 25°C

5˚

/ Parameter

Symbol Rating

Unit

e Collector-base voltage (Emitter open) VCBO

−15

V

pe) Collector-emitter voltage (Base open) VCEO

−15

V

nc d ge. ed ty Emitter-base voltage (Collector open) VEBO

−4

V

sta tinu Collector current

IC

−50

mA

a e cycle iscon Peak collector current

ICP

−100

mA

life d, d Collector power dissipation

PC

125

mW

n u duct type Junction temperature

Tj

125

°C

te tin Pro ed Storage temperature

Tstg −55 to +125 °C

1: Base

2: Emitter

3: Collector

EIAJ: SC-89

SSMini3-F1 Package

Marking Symbol: AK

in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C

a o lude e, p Parameter

Symbol

Conditions

Min

c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0

tinue anc Emitter-base cutoff current (Collector open) IEBO VCE = −3 V, IC = 0

M is con inten Forward current transfer ratio

hFE1 * VCE = −1 V, IC = −10 mA

50

/Dis ma hFE2 VCE = −1 V, IC = −1 mA

30

D ance type, Collector-emitter saturation voltage

VCE(sat) IC = −10 mA, IB = −1 mA

ten ce Transition frequency

fT

VCB = −10 V, IE = 10 mA, f = 200 MHz 800

ain nan Collector output capacitance

M inte (Common base, input open circuited)

Cob VCB = −5 V, IE = 0, f = 1 MHz

d ma Turn-on time

ton Refer to the switching time

(plane Turn-off time

toff measurement circuit

Typ Max

− 0.1

− 0.1

150

− 0.1

1 500

1

− 0.2

12

20

Unit

µA

µA



V

MHz

pF

ns

ns

Storage time

tstg

19

ns

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

hFE1

50 to 120

90 to 150

Ranking is not given for any product.

Publication date: August 2003

SJC00300AED

1

Share Link: