NTMFS4985NFT3G Ver la hoja de datos (PDF) - ON Semiconductor
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NTMFS4985NFT3G Datasheet PDF : 9 Pages
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NTMFS4985NF
TYPICAL PERFORMANCE CURVES
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
Ciss
TJ = 25°C
Coss
Crss
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
10
QT
8
6
4
Qgs
Qgd
ID = 30 A
2
TJ = 25°C
VDD = 15 V
VGS = 10 V
0
0
4
8
12 16 20 24 28 32
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VDD = 15 V
ID = 10 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1
10
100
1000
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
10
100 ms
1 ms
1
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10.0
9.0 VGS = 0 V
8.0 TJ = 25°C
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
60
55
ID = 33 A
50
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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