IRFBC40ASPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFBC40ASPBF Datasheet PDF : 10 Pages
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www.vishay.com
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA d
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 A b
VDS = 50 V, ID = 3.7 A
600
-
-
V
-
0.66
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
1.2
3.4
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance Effective
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
1036
-
VDS = 25 V,
-
136
-
f = 1.0 MHz, see fig. 5
-
7.0
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
1487
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
36
-
VDS = 0 V to 480 V c
-
48
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
42
Qgs
VGS = 10 V
ID = 6.2 A, VDS = 480 V,
see fig. 6 and 13 b
-
-
10
nC
Qgd
-
-
20
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
Rg
VDD = 300 V, ID = 6.2 A,
Rg = 9.1 , RD = 47
see fig. 10 b
f = 1 MHz, open drain
-
13
-
-
23
-
ns
-
31
-
-
18
-
0.6
-
3.9
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current a
ISM
p - n junction diode
D
G
S
-
-
6.2
A
-
-
25
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 V b
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b
-
431
647
ns
1.8
2.8
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. Uses IRHFBC40A, SiHFBC40A data and test conditions.
S16-0763-Rev. D, 02-May-16
2
Document Number: 91113
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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