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4468

30V N-Channel MOSFET

Alpha and Omega Semiconductor 

AO4468

30V N-Channel MOSFET

General Description

Product Summary

The AO4468 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low RDS(ON). This device is ideal for load switch

and battery protection applications.

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

RDS(ON) (at VGS = 4.5V)

ESD Protected

100% UIS Tested

100% Rg Tested

30V

10.5A

< 17mΩ

< 23mΩ

Top View

D

D

D

D

SOIC-8

Bottom View

D

G

G

S

S

S

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

ID

IDM

IAS, IAR

EAS, EAR

TA=25°C

Power Dissipation B TA=70°C

PD

Junction and Storage Temperature Range

TJ, TSTG

Maximum

30

±20

10.5

8.5

50

19

18

3.1

2

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

31

59

Maximum Junction-to-Lead

Steady-State

RθJL

16

Max

40

75

24

Units

V

V

A

A

mJ

W

°C

Units

°C/W

°C/W

°C/W

Rev 6: December 2010

www.aosmd.com

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