ISL9V5045S3ST Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
ISL9V5045S3ST Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
55
50
VGE = 4.0V
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
3000
2500
FREQUENCY = 1 MHz
2000
CIES
1500
1000
500
CRES
COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
2.0
VCE = VGE
1.8
ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1KΩ
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1
VCE = 6V
0
0
10
20
30
40
50
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
5
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
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