IRFB20N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500 ––– ––– V
––– 0.61 ––– V/°C
––– 0.21 0.25 Ω
3.0 ––– 5.0 V
––– ––– 50 µA
––– ––– 250 µA
––– ––– 100
nA
––– ––– -100
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 12A
Qg
Total Gate Charge
––– ––– 110
ID = 20A
Qgs
Gate-to-Source Charge
––– ––– 33 nC VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 54
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 22 –––
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 74 ––– ns ID = 20A
––– 45 –––
RG = 7.5Ω
––– 33 –––
VGS = 10V,See Fig. 10
Ciss
Input Capacitance
––– 2870 –––
VGS = 0V
Coss
Output Capacitance
––– 320 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 34 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 3480 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
––– 85 –––
––– 160 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 20
A showing the
integral reverse
G
––– ––– 80
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 20A, VGS = 0V
––– 520 780 ns TJ = 25°C, IF = 20A
––– 5.3 8.0 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω,
IAS = 20A,
ISD ≤ 20A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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